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PD - 94895A
IRLML5203PBF
l l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free
HEXFET(R) Power MOSFET VDSS
-30V
RDS(on) max (mW)
98@VGS = -10V 165@VGS = -4.5V
ID
-3.0A -2.6A
Description
These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
G1 3D S 2
Micro3TM
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-30 -3.0 -2.4 -24 1.25 0.80 10 20 -55 to + 150
Units
V A W mW/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
100
Units
C/W
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11/8/04
IRLML5203PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -30 --- --- --- -1.0 3.1 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.019 --- --- --- --- --- --- --- --- 9.5 2.3 1.6 12 18 88 52 510 71 43
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 98 VGS = -10V, ID = -3.0A m 165 VGS = -4.5V, ID = -2.6A -2.5 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.0A -1.0 VDS = -24V, VGS = 0V A -5.0 VDS = -24V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 14 ID = -3.0A 3.5 nC VDS = -24V 2.4 VGS = -10V --- VDD = -15V --- ID = -1.0A ns --- R G = 6.0 --- VGS = -10V --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- 17 12 -1.3 -24 -1.2 26 18 V ns nC A
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.3A, VGS = 0V TJ = 25C, IF = -1.3A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t 5sec.
Pulse width 400s; duty cycle 2%.
2
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IRLML5203PBF
100
VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP
100
-I D , Drain-to-Source Current (A)
10
-I D , Drain-to-Source Current (A)
10
VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP
1
-2.70V
0.1
1
-2.70V
20s PULSE WIDTH TJ = 150 C
1 10 100
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 3.0A
-I D , Drain-to-Source Current (A)
1.5
10
TJ = 150 C
1
1.0
TJ = 25 C
V DS = -15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0
0.5
0.1 2.0
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLML5203PBF
800
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -3.0A
VDS =-24V VDS =-15V
16
C, Capacitance (pF)
600
Ciss
400
12
8
200
4
Coss Crss
0 1 10 100
0
0
4
8
12
16
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
-ID , Drain Current (A) I
10
10
10us
TJ = 150 C
100us
1
1
1ms
TJ = 25 C
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.1 0.1
TA = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLML5203PBF
3.0
VDS VGS
RD
-ID , Drain Current (A)
VGS
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
0.0
VGS
25
50
TC , Case Temperature ( C)
75
100
125
150
10%
Fig 9. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJA )
100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10
0.1 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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+
2.0
-
RG
D.U.T. VDD
5
IRLML5203PBF
RDS(on) , Drain-to -Source On Resistance ( )
0.13 0.12 0.11 0.10 0.09 0.08 0.07 4.0 6.0 8.0 10.0 12.0 14.0 16.0
RDS (on) , Drain-to-Source On Resistance ()
0.14
0.40
0.30
0.20
VGS = -4.5V
ID = -3.0A
0.10
VGS = -10V
0.00 0 4 8 12 16 -I D , Drain Current (A)
-V GS, Gate -to -Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate Voltage
Fig 12. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG QGS VG QGD
12V
.2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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+
D.U.T.
-
VDS
IRLML5203PBF
2.5
30
-VGS(th) , Variace ( V )
20
2.0
Power (W)
10 0 0.001
ID = -250A
1.5 -75 -50 -25 0 25 50 75 100 125 150
0.010
0.100
1.000
10.000
100.000
T J , Temperature ( C )
Time (sec)
Fig 14. Threshold Voltage Vs. Temperature
Fig 15. Typical Power Vs. Time
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IRLML5203PBF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
6
D
5
S Y M B O L
DIMENS IONS MILLIMET ERS MAX MIN 1.12 0.89 0.10 0.01 1.02 0.88 0.30 0.50 0.20 0.08 3.04 2.80 2.64 2.10 1.40 1.20 0.95 BS C 1.90 BS C 0.40 0.60 0.25 BS C 0 8 0.10 0.20 0.15 INCHES MIN MAX .036 .044 .0004 .0039 .035 .040 .0119 .0196 .0032 .0078 .111 .119 .083 .103 .048 .055 .0375 BS C .075 B S C .0158 .0236 .0118 BS C 0 8 .004 .008 .006
3
E1
6 2
ccc
E CB A
A A1 A2 b c D E E1 e e1 L L1 0 aaa bbb ccc 4
H
1
e e1
B
5
A A2
L1 A1 3X b bbb CAB a aa C
3 S URF 7
3X L
0
RECOMMENDED FOOT PRINT
0.972 3X [.038] 2.742 [.1079]
NOTE S 1. DIME NSIONING AND T OLE RANCING PER AS ME Y14.5M-1994. 2. DIME NSIONS AR E S HOWN IN MIL LIME TE RS AND INCHES . 3. CONTR OL LING DIMENS ION: MILLIME T ER. 4 DAT UM PL ANE H IS LOCAT E D AT T HE MOL D PARTING LINE. 5 DAT UM A AND B TO BE DE T ERMINE D AT DATUM PLANE H. 6 DIME NSIONS D AND E 1 ARE ME AS URED AT DATUM PLANE H. 7 DIME NSION L IS T HE L EAD LE NGT H FOR S OLDER ING T O A SUBS TR AT E. 8. OUT LINE CONFORMS T O JE DEC OUT LINE T O-236AB.
0.95 [.0375]
3X 1.90 [.075]
0.802 [.031]
Micro3 (SOT-23/TO-236AB) Part Marking Information
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
PART NUMBER
LOT CODE
PART NUMBER CODE REF ERENCE: A= B= C= D= E= F= G= H= IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203
24 25 26
X Y Z
W = (27-52) IF PRECEDED BY A LET TER YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
50 51 52
X Y Z
8
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IRLML5203PBF
Micro3TM Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 1.32 ( .051 ) 1.12 ( .045 )
TR
3.55 ( .139 ) 3.45 ( .136 )
8.3 ( .326 ) 7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 ) 3.9 ( .154 )
1.1 ( .043 ) 0.9 ( .036 )
0.35 ( .013 ) 0.25 ( .010 )
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/04
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